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STAP85025S

N-channel enhancement-mode lateral MOSFETs

STAP85025S Features

* Excellent thermal stability

* Common source configuration

* POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V

* Plastic package

* ESD protection

* In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Pack

STAP85025S General Description

The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, lin.

STAP85025S Datasheet (122.27 KB)

Preview of STAP85025S PDF

Datasheet Details

Part number:

STAP85025S

Manufacturer:

STMicroelectronics ↗

File Size:

122.27 KB

Description:

N-channel enhancement-mode lateral mosfets.
STAP85025S RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet - production data STAP1 Figure 1. Pin con.

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STAP85025S N-channel enhancement-mode lateral MOSFETs STMicroelectronics

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