STAP85025S N-channel enhancement-mode lateral MOSFETs

STMicroelectronics

Description

STAP85025S RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet - production data STAP1 Figure 1.Pin con.
The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor.

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Datasheet Specifications

Part number: STAP85025S
Manufacturer: STMicroelectronics ↗
File Size: 122.27 KB
Datasheet: STAP85025S-STMicroelectronics.pdf
Description: N-channel enhancement-mode lateral MOSFETs

Features

* Excellent thermal stability
* Common source configuration
* POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
* Plastic package
* ESD protection
* In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Pack

Applications

* It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution fo

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STAP85025S N-channel enhancement-mode lateral MOSFETs STMicroelectronics

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