STAP85050 Datasheet - ST Microelectronics

STAP85050 RF power transistor

The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linea.

STAP85050_STMicroelectronics.pdf

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Datasheet Details

Part number:

STAP85050

Manufacturer:

STMicroelectronics ↗

File Size:

280.01 KB

Description:

Rf power transistor.

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STAP85050 power transistor ST Microelectronics