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STAP85050

RF power transistor

STAP85050 Features

* Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20010-E is a common source N-Cha

STAP85050 General Description

The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linea.

STAP85050 Datasheet (280.01 KB)

Preview of STAP85050 PDF

Datasheet Details

Part number:

STAP85050

Manufacturer:

STMicroelectronics ↗

File Size:

280.01 KB

Description:

Rf power transistor.

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STAP85050 power transistor ST Microelectronics

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