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STAP85050 Datasheet - ST Microelectronics

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STAP85050 RF power transistor

PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.com .
The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

STAP85050_STMicroelectronics.pdf

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Datasheet Details

Part number:

STAP85050

Manufacturer:

STMicroelectronics ↗

File Size:

280.01 KB

Description:

RF power transistor

Applications

* It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E’s superior linearity performance makes it an idea

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