STAP85050 - RF power transistor

ST Microelectronics

Datasheet Details

Part number	STAP85050
Manufacturer	STMicroelectronics
File Size	280.01 KB
Description	RF power transistor
Datasheet	STAP85050_STMicroelectronics.pdf

The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

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Published: Jun 10, 2009 |