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STAP1011-180

RF Power Transistor

STAP1011-180 Features

* Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive Description The STAP1011-180 is a common source N-channel enhancement-mode

STAP1011-180 General Description

The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for 1030-1090 MHz avionics applications. STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package. The STAP package was designed to offer high reliability and power capabil.

STAP1011-180 Datasheet (148.93 KB)

Preview of STAP1011-180 PDF

Datasheet Details

Part number:

STAP1011-180

Manufacturer:

STMicroelectronics ↗

File Size:

148.93 KB

Description:

Rf power transistor.

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STAP1011-180 Power Transistor ST Microelectronics

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