STAP1011-180 - RF Power Transistor

ST Microelectronics

Datasheet Details

Part number	STAP1011-180
Manufacturer	STMicroelectronics
File Size	148.93 KB
Description	RF Power Transistor
Datasheet	STAP1011-180_STMicroelectronics.pdf

The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor.

Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive.

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Published: Jun 10, 2009 |