STB25NM50N-1, STB25NM50N Datasheet - ST Microelectronics

STB25NM50N-1 N-CHANNEL POWER MOSFET

The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency co.

STB25NM50N-1 Features

* TYPE STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N STB25NM50N

* Figure 1: Package ID 22 A 22 A(

* ) 22 A 22 A 22 A RDS(on) 0.140 0.140 0.140 0.140 0.140 Ω Ω Ω Ω Ω VDSS (@TjMAX) 550V 550V 550V 550V 550V 3 1 2 3 12 TO-220 3 1 I²PAK

* HIGH dv/dt AND AVALANCHE CAPABILITIES

STB25NM50N_STMicroelectronics.pdf