The STx25NM50N is realized with the second generation of MDmesh Technology.
This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency co
STB25NM50N-1 Features
* TYPE STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N STB25NM50N
* Figure 1: Package ID 22 A 22 A(
* ) 22 A 22 A 22 A RDS(on) 0.140 0.140 0.140 0.140 0.140 Ω Ω Ω Ω Ω VDSS (@TjMAX) 550V 550V 550V 550V 550V 3 1 2 3 12 TO-220 3 1 I²PAK
* HIGH dv/dt AND AVALANCHE CAPABILITIES
STB25NM50N_STMicroelectronics.pdf
Datasheet Details
STB25NM50N-1, STB25NM50N
599.51 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: STB25NM50N-1, STB25NM50N.
Please refer to the document for exact specifications by model.
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