STB25NM60N-1, STB25NM60N Datasheet - ST Microelectronics

STB25NM60N-1 N-CHANNEL POWER MOSFET

This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high effi.

STB25NM60N-1 Features

* Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A 1. Limited only by maximum temperature allowed

* 100% avalanche tested

* Low input

STB25NM60N_STMicroelectronics.pdf