This series of devices is realized with the second generation of MDmesh™ technology.
This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high effi
STB25NM60N-1 Features
* Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A 1. Limited only by maximum temperature allowed
* 100% avalanche tested
* Low input
STB25NM60N_STMicroelectronics.pdf
Datasheet Details
STB25NM60N-1, STB25NM60N
555.70 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: STB25NM60N-1, STB25NM60N.
Please refer to the document for exact specifications by model.
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