STB5610

Part number:

STB5610

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STMicroelectronics ↗

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📄 Download STB5610 Datasheet PDF

Description:

Gps rf front-end ic.
www.DataSheet4U.com STB5610 GPS RF FRONT-END IC PRELIMINARY DATA * ONE CHIP SYSTEM TO INTERFACE GP.
DataSheet4U.com The STB5610, using ST Microelectronics RF Bipolar technology, implements a Global Po.

STB5600 Datasheet PDF

STB5600, ST Microelectronics
.. ® STB5600 GPS RF FRONT-END IC s s s s s s s s ONE CHIP SYSTEM TO INTERFACE ACTIVE ANTENNA TO ST20GP1 MICROCONTROLLER COMPLET.

STB50N25M5 Datasheet PDF

STB50N25M5, STMicroelectronics
STB50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET in D²PAK package Datasheet — production data Features Type VDSS RDS(on) max ID .

STB50NE08 Datasheet PDF

STB50NE08, ST Microelectronics
STB50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET T Y PE V DSS RDS(on) ID ST B50NE08 80 V <0.024 Ω 50 A s TYPICAL R.

STB50NE10 Datasheet PDF

STB50NE10, ST Microelectronics
STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V <0.027Ω 50A t(s) .

STB50NE10L Datasheet PDF

STB50NE10L, ST Microelectronics
® STB50NE10L N - CHANNEL 100V - 0.020Ω - 50A - D2PAK STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STB50NE10L 100 V <0.025 Ω 50 A s TYPICAL R.

STB50NE10L-T4 Datasheet PDF

STB50NE10L-T4, VBsemi
STB50NE10L-T4-VB STB50NE10L-T4-VB Datasheet Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Config.

STB50NF25 Datasheet PDF

STB50NF25, STMicroelectronics
STB50NF25 STP50NF25 N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET™ Power MOSFET Features Type STP50NF25 STB50NF25 VDSS 25.

STB50NF25 Datasheet PDF

STB50NF25, VBsemi
STB50NF25-VB STB50NF25-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 250 RDS(on) () 0.040 at VGS = 10 V.

GPS RF FRONT-END IC

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