STD1NC70Z Datasheet (ST Microelectronics)

STD1NC70Z, N-CHANNEL POWER MOSFET

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari

N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 s s s s s STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 VDSS 700 700 700 700 V V V V RDS(on) < 8.5 < 8.5 < 8.5 < 8.5 Ω Ω Ω Ω ID 1.4 A 1.4 A 1.4 A 1.4 A Pw 50 W 25 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 7.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220 TO-220FP 3 2 1 3 1 IPAK DPAK DE

STD1NC70Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag