Datasheet4U Logo Datasheet4U.com

STD20NE06 - N-CHANNEL MOSFET

Datasheet Summary

Description

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.

📥 Download Datasheet

Datasheet preview – STD20NE06

Datasheet Details

Part number STD20NE06
Manufacturer STMicroelectronics
File Size 96.14 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STD20NE06 Datasheet
Additional preview pages of the STD20NE06 datasheet.

📁 Similar Datasheet

  • STD20N03L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STD20N15 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STD20NF06L - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • STD20NF06LAG - N-CHANNEL POWER MOSFET (STMicroelectronics)
  • STD20NF06T4 - N-Channel MOSFET (STMicroelectronics)
  • STD20NF20 - N-channel Power MOSFET (STMicroelectronics)
  • STD20NF20 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • STD200 - Thyristor-Diode Modules (Sirectifier)
  • STD200 - RESETTABLE FUSES (Littelfuse)
  • STD2000 - Single-Chip Worldwide iDTV Processor (STMicroelectronics)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
STD20NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST D20NE06 s s s s V DSS 60 V R DS(on) < 0.040 Ω ID 20 A s TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Published: |