STD6NK50Z Datasheet - ST Microelectronics

STD6NK50Z N-CHANNEL POWER MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripINTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is takDataSheet4U.com en to ensure a very good dv/dt capability for the most deman.

www.DataSheet4U.com STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE STP6NK50Z STF6NK50Z STD6NK50Z s s s s s s VDSS 500 V 500 V 500 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 5.6 A 5.6 A 5.6 A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 0.93 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTI.

STD6NK50Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STD6NK50Z Datasheet (613.19 KB)