STD6N80K5

N-channel Power MOSFET

STMicroelectronics

STD6N80K5 Features

* Order code VDS STD6N80K5 800 V

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected RDS(on) max. 1.6 Ω ID 4.5 A Applications

* Switching applications

STD6N80K5 General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product st.

STD6N80K5 Datasheet (858.03 KB)