STD6N90K5 Datasheet - STMicroelectronics

STD6N90K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order cod.

STD6N90K5 Features

* Order code STD6N90K5 VDS 900 V RDS(on) max. 1.10 Ω ID 6A Figure 1: Internal schematic diagram

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications

* Switching application

STD6N90K5-STMicroelectronics.pdf