STD6N62K3

N-channel Power MOSFET

STMicroelectronics

STD6N62K3 Features

* Order codes VDS RDS(on) max. STD6N62K3 620 V 1.2 Ω

* 100% avalanche tested

* Extremely high dv/dt capability

* Very low intrinsic capacitance

* Improved diode reverse recovery characteristics

* Zener-protected ID 5.5 A PTOT 90 W Applications

STD6N62K3 General Description

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m.

STD6N62K3 Datasheet (509.55 KB)