STE50DE100

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE

ST Microelectronics

STE50DE100 Features

* VCS(ON) 1.3 V n Figure 1: Package RCS(ON) 0.026 W IC 50 A n n n n HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz ULTRA LOW CISS LOW DYNAMIC VCS(ON) ISOTOP APPLICATION n INDUSTRIAL CONVERTERS n WELDING DESCRIPTION The STE50DE

STE50DE100 General Description

The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment. Figure 2: Internal Schemati.

STE50DE100 Datasheet (271.73 KB)

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Part number:

STE50DE100

Manufacturer:

STMicroelectronics ↗

File Size:

271.73 KB

Description:

Hybrid emitter switched bipolar transistor esbt 1000 v - 50 a - 0.026 w power module.

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STE50DE100 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 0.026 POWER MODULE ST Microelectronics

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STE50DE100 Features

STE50DE100 General Description

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