STGW30NC60WD

N-CHANNEL IGBT

ST Microelectronics

STGW30NC60WD Features

* Type STGW30NC60WD

* VCES 600V VCE(sat)Max @25°C < 2.5V IC @100°C 30A High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247

* Description Using the latest high voltage technology based on a pat

STGW30NC60WD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application. Internal schematic diagram .

STGW30NC60WD Datasheet (520.35 KB)