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STGW30V60DF, STGB30V60DF Datasheet - STMicroelectronics

STGW30V60DF Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore.

STGW30V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode Applications

STGB30V60DF-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STGW30V60DF, STGB30V60DF. Please refer to the document for exact specifications by model.
STGW30V60DF Datasheet Preview Page 2 STGW30V60DF Datasheet Preview Page 3

Datasheet Details

Part number:

STGW30V60DF, STGB30V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.09 MB

Description:

Trench gate field-stop igbt.

Note:

This datasheet PDF includes multiple part numbers: STGW30V60DF, STGB30V60DF.
Please refer to the document for exact specifications by model.

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TAGS

STGW30V60DF STGB30V60DF Trench gate field-stop IGBT STMicroelectronics

STGW30V60DF Distributor