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STGW30M65DF2 Datasheet - STMicroelectronics

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STGW30M65DF2 Trench gate field-stop IGBT

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diag.
plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

STGW30M65DF2-STMicroelectronics.pdf

Preview of STGW30M65DF2 PDF

Datasheet Details

Part number:

STGW30M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

562.55 KB

Description:

Trench gate field-stop IGBT

Features

* 6 µs of minimum short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 50 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resistance

Applications

* Motor control
* UPS

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