STGW30M65DF2 - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW30M65DF2
Manufacturer	STMicroelectronics ↗
File Size	562.55 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW30M65DF2-STMicroelectronics.pdf

STGW30M65DF2 Product details

Description

plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.Order code STGW30M65DF2 STGWA30M65DF2 Table 1: Device summ

Features

6 µs of minimum short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 50 A.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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Published: Mar 22, 2016 |