STGW30H65FB Datasheet, Igbt, STMicroelectronics

STGW30H65FB Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) at IC = 30 A
• Tigh

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Part number:

STGW30H65FB

Manufacturer:

STMicroelectronics ↗

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📄 Datasheet

Description:

Igbt. These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new H

STGW30H65FB Application

• Applications
• Photovoltaic inverters
• Power factor correction
• Welding
• High-frequency converters Description Th

TAGS

STGW30H65FB

STMicroelectronics

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