STP4NK50Z, STP-4NK Datasheet - ST Microelectronics

STP4NK50Z N-Channle MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 s s s s s s VDSS 500 500 500 500 V V V V RDS(on) < 2.7 < 2.7 < 2.7 < 2.7 Ω Ω Ω Ω ID 3 3 3 3 A A A A Pw 45 W 20 W 45 W 45 W 3 1 2 TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220.

STP4NK50Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP-4NK-50Z.pdf