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STP50N06 Datasheet - ST Microelectronics

STP50N06 N-Channel Enhancement Mode Power MOS Transistor

w w a D . w S a t e e h U 4 t m o .c STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPE VDSS 60 V 60 V STP50N06 STP50N06FI s s s s s s s s TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOL.

STP50N06_STMicroelectronics.pdf

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Datasheet Details

Part number:

STP50N06

Manufacturer:

STMicroelectronics ↗

File Size:

282.08 KB

Description:

N-channel enhancement mode power mos transistor.

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STP50N06 STP50N06 N-Channel Enhancement Mode Power MOS Transistor ST Microelectronics

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