w w a D .
w S a t e e h U 4 t m o .c STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR VDSS 60 V 60 V R DS(on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPE STP50N06L STP50N06LFI s s s s s s s s s TYPICAL RDS(on) = 0.024 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 TO-220 APPLIC
