STP53N08 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP53N08 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP53N08 s s s s s s s s V DSS 80 V R DS(on) < 0.024 Ω ID 53 A TYPICAL RDS(on) = 0.018 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s M
