TR136D Datasheet - ST Microelectronics

TR136D High voltage fast-switching NPN power transistor

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Figure 1. Internal schematic diagrams Table 1. Device s.

TR136D Features

* High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications

* TO-220 Electronic ballast for fluorescent lighting Elec

TR136D_STMicroelectronics.pdf