GD150MLX65L3S Datasheet - STARPOWER

GD150MLX65L3S - IGBT

GD150MLX65L3S Features

* Low VCE(sat) Trench IGBT technology

* Low switching loss

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Fast & soft reverse recovery anti-parallel FWD

* Low inductance case Typical Applications

Datasheet Details

GD150MLX65L3S

STARPOWER

577.00 KB

Igbt.

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