GD25PJA120L3S Datasheet - STARPOWER

GD25PJA120L3S, IGBT

GD25PJA120L3S STARPOWER SEMICONDUCTOR GD25PJA120L3S 1200V/25A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low co

Features

* Low VCE(sat) Trench IGBT technology
* 8μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated heatsink using DBC technology Typic

GD25PJA120L3S-STARPOWER.pdf