GD25PJT120L3S

IGBT

* Low VCE(sat) Trench IGBT technology

* 10μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175℃

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper baseplate using DBC technolo

GD25PJT120L3S

STARPOWER

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Igbt.

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GD25PJT120L3S IGBT STARPOWER

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