GD275MJS120L6S Datasheet - STARPOWER

GD275MJS120L6S IGBT

GD275MJS120L6S Features

* Low VCE(sat) Trench IGBT technology

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175 oC

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper baseplate using Si3N4 AMB technology Typical Applications

* Solar power

* 3-leve

Datasheet Details

GD275MJS120L6S

STARPOWER

614.00 KB

Igbt.

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GD275MJS120L6S IGBT STARPOWER

GD275MJS120L6S Distributor