* Vceo IC(max.) 160 V 0.5 A
* Hermetic packages
* ESCC and JANS qualified
* Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providin
2N5551HR Datasheet (255.85 KB)
2N5551HR
255.85 KB
Hi-rel npn bipolar transistor.
2N5551HR
Datasheet
Rad-Hard 160 V, 0.5 A NPN bipolar transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
(2) B
.
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