2N5551HR Hi-Rel NPN bipolar transistor

STMicroelectronics

Description

2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid.C (3) (2) B .
This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (.

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Datasheet Specifications

Part number: 2N5551HR
Manufacturer: STMicroelectronics ↗
File Size: 255.85 KB
Datasheet: 2N5551HR_STMicroelectronics.pdf
Description: Hi-Rel NPN bipolar transistor

Features

* Vceo IC(max. ) 160 V 0.5 A
* Hermetic packages
* ESCC and JANS qualified

Applications

* and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Product summary Device JANSR2N5551UBx JANS2N5551UB

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2N5551HR Hi-Rel NPN bipolar transistor STMicroelectronics

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