Datasheet Specifications
- Part number
- 2N5551S
- Manufacturer
- KEC
- File Size
- 351.90 KB
- Datasheet
- 2N5551S-KEC.pdf
- Description
- EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..
Features
* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ) IC=50mA, IB=5mA Low Noise : NF=8dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter2N5551S Distributors
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