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2N5551S Datasheet - KEC

2N5551S EPITAXIAL PLANAR NPN TRANSISTOR

2N5551S Features

* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter

2N5551S-KEC.pdf

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Datasheet Details

Part number:

2N5551S

Manufacturer:

KEC

File Size:

351.90 KB

Description:

Epitaxial planar npn transistor.

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2N5551S 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR KEC

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