Datasheet Details
- Part number
- 2N5551S
- Manufacturer
- KEC
- File Size
- 351.90 KB
- Datasheet
- 2N5551S-KEC.pdf
- Description
- EPITAXIAL PLANAR NPN TRANSISTOR
2N5551S Description
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..
2N5551S Features
* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ) IC=50mA, IB=5mA Low Noise : NF=8dB (Max. )
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
180
Collector-Emitter
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