Datasheet4U Logo Datasheet4U.com

2N5401 - EPITAXIAL PLANAR PNP TRANSISTOR

2N5401 Description

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..

2N5401 Features

* High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max. ) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max. ) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas

📥 Download Datasheet

Preview of 2N5401 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N5401
Manufacturer
KEC
File Size
30.36 KB
Datasheet
2N5401-KEC.pdf
Description
EPITAXIAL PLANAR PNP TRANSISTOR

📁 Related Datasheet

  • 2N5401G - Amplifier Transistors (ON Semiconductor)
  • 2N5401HR - 0.5A PNP transistor (STMicroelectronics)
  • 2N5400 - Amplifier Transistor (ON Semiconductor)
  • 2N5404 - SMALL SIGNAL PNP TRANSISTORS (Seme LAB)
  • 2N5405 - SMALL SIGNAL PNP TRANSISTORS (Seme LAB)
  • 2N5406 - SMALL SIGNAL PNP TRANSISTORS (Seme LAB)
  • 2N5407 - SMALL SIGNAL PNP TRANSISTORS (Seme LAB)
  • 2N5408 - PNP Transistor (SSDI)

📌 All Tags

EPITAXIAL PLANAR PNP TRANSISTOR KEC
KEC 2N5401-like datasheet