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2N5401HR - 0.5A PNP transistor

2N5401HR Description

2N5401HR Datasheet Rad-Hard 150 V, 0.5 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid.C (3) (2) B E (1) .
The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to.

2N5401HR Features

* Vceo 150 V IC(max. ) 0.5 A HFE at 5 V, 10 mA > 60 Tj(max. ) 200 °C
* Hermetic packages
* ESCC qualified

2N5401HR Applications

* and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Device 2N5401RUBx 2N5401UBx SOC5401RHRx SOC540

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0.5A PNP transistor STMicroelectronics
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