2N5401S Datasheet - KEC

2N5401S - EPITAXIAL PLANAR PNP TRANSISTOR

2N5401S Features

* High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -160 Collect

2N5401S-KEC.pdf

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Datasheet Details

Part number:

2N5401S

Manufacturer:

KEC

File Size:

342.79 KB

Description:

Epitaxial planar pnp transistor.

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2N5401S EPITAXIAL PLANAR PNP TRANSISTOR KEC