2N5401S EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..

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Datasheet Specifications

Part number: 2N5401S
Manufacturer: KEC
File Size: 342.79 KB
Datasheet: 2N5401S-KEC.pdf
Description: EPITAXIAL PLANAR PNP TRANSISTOR

Features

* High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max. ) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max. ) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -160 Collect

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2N5401S EPITAXIAL PLANAR PNP TRANSISTOR KEC

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