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2N5401S - EPITAXIAL PLANAR PNP TRANSISTOR

2N5401S Description

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..

2N5401S Features

* High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max. ) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max. ) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -160 Collect

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Datasheet Details

Part number
2N5401S
Manufacturer
KEC
File Size
342.79 KB
Datasheet
2N5401S-KEC.pdf
Description
EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR KEC
KEC 2N5401S-like datasheet