Datasheet4U Logo Datasheet4U.com

2N5550S Datasheet - KEC

2N5550S EPITAXIAL PLANAR NPN TRANSISTOR

2N5550S Features

* High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max.) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA Low Noise : NF=10dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 160 Collector-Emit

2N5550S Datasheet (31.54 KB)

Preview of 2N5550S PDF
2N5550S Datasheet Preview Page 2

Datasheet Details

Part number:

2N5550S

Manufacturer:

KEC

File Size:

31.54 KB

Description:

Epitaxial planar npn transistor.

📁 Related Datasheet

2N5550 Amplifier Transistor (ON Semiconductor)

2N5550 Silicon NPN Transistor (NTE)

2N5550 Amplifier Transistors (Motorola)

2N5550 EPITAXIAL PLANAR NPN TRANSISTOR (KEC)

2N5550 NPN high-voltage transistors (Philips)

2N5550 SILICON NPN TRANSISTORS (CENTRAL SEMICONDUCTOR)

2N5550 NPN Transistor (SeCoS)

2N5550 NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

TAGS

2N5550S EPITAXIAL PLANAR NPN TRANSISTOR KEC

2N5550S Distributor