2N5550S Datasheet, Transistor, KEC

2N5550S Features

• Transistor High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max.) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA Low Noise : NF=10d

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Part number:

2N5550S

Manufacturer:

KEC

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31.54kb

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📄 Datasheet

Description:

Epitaxial planar npn transistor.

TAGS

2N5550S

KEC

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