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2N5551SC

EPITAXIAL PLANAR NPN TRANSISTOR

2N5551SC Features

* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitt

2N5551SC Datasheet (339.06 KB)

Preview of 2N5551SC PDF

Datasheet Details

Part number:

2N5551SC

Manufacturer:

KEC

File Size:

339.06 KB

Description:

Epitaxial planar npn transistor.

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2N5551SC EPITAXIAL PLANAR NPN TRANSISTOR KEC

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