Datasheet Specifications
- Part number
- 2N5551SC
- Manufacturer
- KEC
- File Size
- 339.06 KB
- Datasheet
- 2N5551SC-KEC.pdf
- Description
- EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..
Features
* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ) IC=50mA, IB=5mA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitt2N5551SC Distributors
📁 Related Datasheet
📌 All Tags