Part number:
2N5551C
Manufacturer:
KEC
File Size:
30.18 KB
Description:
Epitaxial planar npn transistor.
* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-
2N5551C
KEC
30.18 KB
Epitaxial planar npn transistor.
📁 Related Datasheet
2N5551 - Silicon NPN Transistor
(NTE)
2N5550 & 2N5551 Silicon NPN Transistor Audio Power Amplifier TO−92 Type Package
Description: The 2N5550 and 2N5551 is a silicon NPN amplifier transis.
2N5551 - Amplifier Transistors
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RAT.
2N5551 - NPN General Purpose Amplifier
(Fairchild Semiconductor)
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
August 2018
2N5551 / MMBT5551 NPN General-Purpose Amplifier
Description
This device is designed for.
2N5551 - NPN Amplifier
(ON Semiconductor)
NPN General-Purpose Amplifier
2N5551
Description This device is designed for general−purpose high−voltage
amplifiers and gas discharge display driver.
2N5551 - NPN Transistor
(SeCoS)
Elektronische Bauelemente
2N5551
600mA, 160V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead .
2N5551 - Bipolar Transistor
(Multicomp)
Bipolar Transistor
Collector 3
2 Base
1 Emitter
Maximum Ratings:
Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base.
2N5551 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V).
2N5551 - NPN TRANSISTOR
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.