2N5551C Datasheet, Transistor, KEC

2N5551C Features

• Transistor High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB

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Part number:

2N5551C

Manufacturer:

KEC

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30.18kb

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📄 Datasheet

Description:

Epitaxial planar npn transistor.

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2N5551C

KEC

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