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2N5551C Datasheet - KEC

2N5551C EPITAXIAL PLANAR NPN TRANSISTOR

2N5551C Features

* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-

2N5551C-KEC.pdf

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Datasheet Details

Part number:

2N5551C

Manufacturer:

KEC

File Size:

30.18 KB

Description:

Epitaxial planar npn transistor.

2N5551C Distributor

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2N5551C 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR KEC