Part number:
2N5551
Manufacturer:
KEC
File Size:
30.17 KB
Description:
Npn transistor.
* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-
2N5551
KEC
30.17 KB
Npn transistor.
📁 Related Datasheet
2N555 - PNP germanium power transistors
(Motorola)
2N 178 (GERMANIUM)
2N554
2N555
~ PNP germanium power transistor for non-critical power amplifier and power switching applications re-
CASE 11 (TO-.
2N5550 - Amplifier Transistor
(ON Semiconductor)
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector − Emitter V.
2N5550 - Silicon NPN Transistor
(NTE)
2N5550 & 2N5551 Silicon NPN Transistor Audio Power Amplifier TO−92 Type Package
Description: The 2N5550 and 2N5551 is a silicon NPN amplifier transis.
2N5550 - Amplifier Transistors
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RAT.
2N5550 - EPITAXIAL PLANAR NPN TRANSISTOR
(KEC)
.
2N5550 - NPN high-voltage transistors
(Philips)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5550; 2N5551 NPN high-voltage transistors
Product specification Supersedes data of 1999 Ap.
2N5550 - SILICON NPN TRANSISTORS
(CENTRAL SEMICONDUCTOR)
2N5550 2N5551
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN t.
2N5550 - NPN Transistor
(SeCoS)
Elektronische Bauelemente
2N5550
0.6 A, 160 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
