Datasheet4U Logo Datasheet4U.com

74AC04 - HEX INVERTER

Datasheet Summary

Description

protection circuits against static discharge, giving The AC04 is an advanced high-speed CMOS them 2KV ESD immunity and transient excess www.DataSheet4U.com HEX INVERTER fabricated with sub-micron voltage.

📥 Download Datasheet

Datasheet preview – 74AC04

Datasheet Details

Part number 74AC04
Manufacturer STMicroelectronics
File Size 86.86 KB
Description HEX INVERTER
Datasheet download datasheet 74AC04 Datasheet
Additional preview pages of the 74AC04 datasheet.

📁 Similar Datasheet

  • 74AC04 - Hex Inverter (Fairchild Semiconductor)
  • 74AC04 - Hex Inverter (ON Semiconductor)
  • 74AC00 - Quad 2-Input NAND Gate (ON Semiconductor)
  • 74AC00 - Quad 2-Input NAND Gate (Fairchild Semiconductor)
  • 74AC00 - QUAD 2-INPUT NAND GATE (Motorola Inc)
  • 74AC02 - Quad 2-Input NOR Gate (Fairchild Semiconductor)
  • 74AC05 - Hex Inverter (ON Semiconductor)
  • 74AC05 - Hex Inverter (Fairchild Semiconductor)
  • 74AC08 - Quad 2-Input AND Gate (ON Semiconductor)
  • 74AC08 - Quad 2-Input AND Gate (Fairchild Semiconductor)
Other Datasheets by STMicroelectronics
  • 74AC00 - QUAD 2-INPUT NAND GATE
  • 74AC02 - QUAD 2-INPUT NOR GATE
  • 74AC08 - QUAD 2-INPUT AND GATE
  • 74AC10 - TRIPLE 3-INPUT NAND GATE
  • 74AC11 - TRIPLE 3-INPUT AND GATE
  • 74AC125 - QUAD BUS BUFFERS
  • 74AC138 - 3 TO 8 LINE DECODER INVERTING
  • 74AC14 - HEX INVERTER

Full PDF Text Transcription

Click to expand full text
74AC04 HEX INVERTER s s s s s s technology. It is ideal for low power applications mantaining high speed operation similar to s equivalent Bipolar Schottky TTL. The internal circuit is composed of 3 stages s including buffer output, which enables high noise immunity and stable output. s All inputs and outputs are equipped with DESCRIPTION protection circuits against static discharge, giving The AC04 is an advanced high-speed CMOS them 2KV ESD immunity and transient excess www.DataSheet4U.com HEX INVERTER fabricated with sub-micron voltage. silicon gate and double-layer metal wiring C2MOS HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.
Published: |