AM82731-003 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *....REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAP.
The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.

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Datasheet Specifications

Part number: AM82731-003
Manufacturer: STMicroelectronics ↗
File Size: 61.88 KB
Datasheet: AM82731-003_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 3.0 W. MIN. WITH 5.7 dB GAIN BANDWIDTH = 400 MHz .400 x .400 2NLFL (S042) hermetically sealed OR

AM82731-003 Distributors

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AM82731-003 MICROWAVE TRANSISTORS STMicroelectronics

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