AM82731-050 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM82731-050 *...RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR.
The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

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Datasheet Specifications

Part number: AM82731-050
Manufacturer: STMicroelectronics ↗
File Size: 61.06 KB
Datasheet: AM82731-050_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 6 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50

AM82731-050 Distributors

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AM82731-050 MICROWAVE TRANSISTORS STMicroelectronics

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