AM82731-006 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM82731-006 *....RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPA.
The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.

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Datasheet Specifications

Part number: AM82731-006
Manufacturer: STMicroelectronics ↗
File Size: 67.94 KB
Datasheet: AM82731-006_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN BANDWIDTH = 400 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-00

AM82731-006 Distributors

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AM82731-006 MICROWAVE TRANSISTORS STMicroelectronics

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