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AM82731-012 RF & MICROWAVE TRANSISTORS

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Description

AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *..PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

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Applications

* . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 6.0 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM82731-012 82731-12

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AM82731-012 MICROWAVE TRANSISTORS STMicroelectronics
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