G30M65DF2 Datasheet, Igbt, STMicroelectronics

G30M65DF2 Features

• Igbt
• 6 µs of minimum short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safer paralleling
• Low t

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Part number:

G30M65DF2

Manufacturer:

STMicroelectronics ↗

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📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series o

G30M65DF2 Application

• Applications
• Motor control
• UPS
• PFC Description This device is an IGBT developed using an advanced proprietary trench g

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G30M65DF2

STMicroelectronics

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