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GB30V60DF Datasheet - STMicroelectronics

GB30V60DF, IGBT

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA.
This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
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GB30V60DF-STMicroelectronics.pdf

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Datasheet Details

Part number:

GB30V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.83 MB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 30 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

GB30V60DF Distributors

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