GB30V60DF - IGBT
This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore
GB30V60DF Features
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 30 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode Applications
