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IRF830 - N-Channel Power MOSFET

Description

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

This technology matches and improves the performances compared with standard parts from various sources.

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Datasheet preview – IRF830

Datasheet Details

Part number IRF830
Manufacturer STMicroelectronics
File Size 92.73 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF830 Datasheet
Additional preview pages of the IRF830 datasheet.

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Full PDF Text Transcription

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® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
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