M58LT128HST, M58LT128HSB - (M58LT128HSB / M58LT128HST) Flash memories

STMicroelectronics

Datasheet Details

Part number	M58LT128HST, M58LT128HSB
Manufacturer	STMicroelectronics
File Size	916.22 KB
Description	(M58LT128HSB / M58LT128HST) Flash memories
Datasheet	M58LT128HSB_STMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: M58LT128HST, M58LT128HSB. Please refer to the document for exact specifications by model.

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Supply voltage.
VDD = 1.7 V to 2.0 V for program, erase and read.
VDDQ = 2.7 V to 3.6 V for I/O buffers.
VPP = 9 V for fast program Synchronous / Asynchronous Read.
Synchronous Burst Read mode: 52 MHz.
Asynchronous Page Read mode.
Random Access: 85 ns Synchronous Burst Read Suspend Programming time.
2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization.
Multiple Bank memory.

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Published: Oct 31, 2007 |