M58LT256JSB - (M58LT256JSB / M58LT256JST) Flash memories
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8 Signal descriptions .
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12 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 Address inputs (A0-A23) .
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M58LT256JSB Features
* Supply voltage
* VDD = 1.7 V to 2.0 V for program, erase and read
* VDDQ = 2.7 V to 3.6 V for I/O Buffers
* VPP = 9 V for fast program Synchronous / Asynchronous Read
* Synchronous Burst Read mode: 52 MHz
* Random access: 85 ns
* Asynchronous Pa
