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MSC83301 RF & MICROWAVE TRANSISTORS

MSC83301 Description

MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .....REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPAB.
The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a.

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STMicroelectronics MSC83301-like datasheet