Datasheet Details
Part number:
MSC83301
Manufacturer:
File Size:
122.37 KB
Description:
RF & MICROWAVE TRANSISTORS
MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN.
WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE
MSC83301_STMicroelectronics.pdf
MSC83301, RF & MICROWAVE TRANSISTORS
The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system.
This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
The MSC8
MSC83301 Distributor
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