MSC83303 Datasheet - STMicroelectronics

RF & MICROWAVE TRANSISTORS

MSC83303 General Description

The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC8.

MSC83303 Datasheet (119.41 KB)

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MSC83303

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STMicroelectronics ↗

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119.41 KB

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Rf & microwave transistors.
MSC83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY.

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MSC83303 MICROWAVE TRANSISTORS STMicroelectronics

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MSC83303 General Description

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