Datasheet Details
Part number:
MSC83303
Manufacturer:
File Size:
119.41 KB
Description:
RF & MICROWAVE TRANSISTORS
MSC83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .
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REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN.
WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC8
MSC83303_STMicroelectronics.pdf
MSC83303, RF & MICROWAVE TRANSISTORS
The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system.
This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
The MSC8
MSC83303 Distributor
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