P11NM50N Datasheet, Stp11nm50n, STMicroelectronics

P11NM50N Features

• Stp11nm50n Order codes STD11NM50N STF11NM50N STP11NM50N VDSS @TJmax RDS(on) max 550 V < 0.47 Ω ID 8.5 A
• 100% avalanche tested
• Low input capacitance and gate charge

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Part number:

P11NM50N

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STMicroelectronics ↗

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📄 Datasheet

Description:

Stp11nm50n. These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical s

P11NM50N Application

• Applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new

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P11NM50N

STMicroelectronics

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