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P11NM50N Datasheet - STMicroelectronics

P11NM50N - STP11NM50N

These devices are made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficienc

P11NM50N-STMicroelectronics.pdf

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P11NM50N STP11NM50N STMicroelectronics