Part number:
P11NM50N
Manufacturer:
File Size:
452.68 KB
Description:
Stp11nm50n.
These devices are made using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficienc
P11NM50N-STMicroelectronics.pdf
Datasheet Details
P11NM50N
452.68 KB
Stp11nm50n.
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