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P11NM50N

STP11NM50N

P11NM50N Features

* Order codes STD11NM50N STF11NM50N STP11NM50N VDSS @TJmax RDS(on) max 550 V < 0.47 Ω ID 8.5 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Application Switching applications Description These devices are made using the second generat

P11NM50N General Description

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficienc.

P11NM50N Datasheet (452.68 KB)

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P11NM50N STP11NM50N STMicroelectronics

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