P11NM80 Datasheet - STMicroelectronics

P11NM80 N-CHANNEL Power MOSFET

The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s pro.

P11NM80 Features

* Type VDSS RDS(on) RDS(on)

* Qg STB11NM80 800V < 0.40Ω 14Ω

* nC STF11NM80 800V < 0.40Ω 14Ω

* nC STP11NM80 800V < 0.40Ω 14Ω

* nC STW11NM80 800V < 0.40Ω 14Ω

* nC ID 11A 11A 11A 11A

* Low input capacitance and gate charge

* Low gate input resistance

* Best RDS(on)

* Qg i

P11NM80 Datasheet (869.96 KB)