P11NM60N

N-CHANNEL Power MOSFET

STMicroelectronics

P11NM60N Features

* Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed

* 100% avalanche tested

P11NM60N General Description

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h.

P11NM60N Datasheet (769.93 KB)

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P11NM60N

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STMicroelectronics ↗

File Size:

769.93 KB

Description:

N-channel power mosfet.

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P11NM60N N-CHANNEL Power MOSFET STMicroelectronics

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P11NM60N Features

P11NM60N General Description

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